3 documents found :

Article / Chapter
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2021-09-06

Evaluation of the Beyond-fT Operation of an IGZO TFT-Based RF Self-Mixing Circuit

The objective of this study is to show the potential of amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFT) for designing RF communication systems operating in the GHz regime. For that purpose, the self-mixing operation of in-house fabricated IGZO-TFTs beyond their transit frequency…
Article / Chapter
All rights reserved
2021-09-06

Amorphous Indium-Gallium-Zinc-Oxide TFTs Patterned by Self-Aligned Photolithography Overcoming the GHz Threshold

In this letter, we demonstrate amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) with a maximum transit frequency (fT) of 1.1 GHz and maximum oscillation frequency (fmax) of 3.1 GHz, which set a new record for metal-oxide TFTs based on scalable and cost-effective process techniques.…