4 documents found :
Article / Chapter
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2021-09-06
Evaluation of the Beyond-fT Operation of an IGZO TFT-Based RF Self-Mixing Circuit
The objective of this study is to show the potential of amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFT) for designing RF communication systems operating in the GHz regime. For that purpose, the self-mixing operation of in-house fabricated IGZO-TFTs beyond their transit frequency…
Article / Chapter
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2021-09-06
Amorphous Indium-Gallium-Zinc-Oxide TFTs Patterned by Self-Aligned Photolithography Overcoming the GHz Threshold
In this letter, we demonstrate amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) with a maximum transit frequency (fT) of 1.1 GHz and maximum oscillation frequency (fmax) of 3.1 GHz, which set a new record for metal-oxide TFTs based on scalable and cost-effective process techniques.…
Article / Chapter
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2020-08-31
Spatial Atmospheric Pressure Atomic Layer Deposition of Tin Oxide as an Impermeable Electron Extraction Layer for Perovskite…
This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsami.7b17701.
Article / Chapter
All rights reserved
2020-08-31
Distributed Feedback Lasers Based on MAPbBr3
This is the peer reviewed version of the following article: Pourdavoud, N., Mayer, A., Buchmüller, M., Brinkmann, K., Häger, T., Hu, T., Heiderhoff, R., Shutsko, I., Görrn, P., Chen, Y., Scheer, H.‐C., Riedl, T.: Distributed Feedback Lasers Based on MAPbBr3. Advanced Materials Technologies 2018, 3(4),…