Amorphous Indium-Gallium-Zinc-Oxide TFTs Patterned by Self-Aligned Photolithography Overcoming the GHz Threshold

In  this  letter,  we  demonstrate  amorphous indium-gallium-zinc-oxide  (IGZO)  thin-film  transistors (TFTs) with a maximum  transit frequency  (fT)  of  1.1 GHz and  maximum  oscillation  frequency  (fmax)  of  3.1 GHz, which  set  a  new  record  for  metal-oxide  TFTs  based  on scalable and cost-effective process techniques. A key for the outstanding high-frequency performance of our TFTs is  an  optimized  two-step  self-alignment  concept,  which allows  the  rigorous  minimization  of  parasitic  elements, that  typically limit  high-frequency operation.   We expect that our results will inspire a wide range of high-frequency circuits based on metal-oxide electronics.

This document is the accepted manuscript version that has been published in final form in: IEEE Electron Device Letters.

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