Amorphous Indium-Gallium-Zinc-Oxide TFTs Patterned by Self-Aligned Photolithography Overcoming the GHz Threshold
In this letter, we demonstrate amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) with a maximum transit frequency (fT) of 1.1 GHz and maximum oscillation frequency (fmax) of 3.1 GHz, which set a new record for metal-oxide TFTs based on scalable and cost-effective process techniques. A key for the outstanding high-frequency performance of our TFTs is an optimized two-step self-alignment concept, which allows the rigorous minimization of parasitic elements, that typically limit high-frequency operation. We expect that our results will inspire a wide range of high-frequency circuits based on metal-oxide electronics.
This document is the accepted manuscript version that has been published in final form in: IEEE Electron Device Letters. https://doi.org/10.1109/LED.2020.3029956
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